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Linear and Switch-Mode
RF Power Amplifiers
Linear and Switch-Mode
RF Power Amplifiers
Design and Implementation Methods
Abdullah Eroglu
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vii
viii Contents
xi
xii Preface
xiii
Author
Abdullah Eroglu is a professor of electrical engineering at the Electrical and
Computer Engineering Department of Purdue University, Fort Wayne. He previ-
ously worked as a radio frequency (RF) senior design engineer at MKS Instruments,
ENI Products, Rochester, New York, and as a faculty fellow in the Fusion Energy
Division of Oak Ridge National Laboratory, Oak Ridge, Tennessee.
His research focuses on design and development of RF devices for applications
including communication, energy, semiconductor manufacturing, and health care.
He also investigates the propagation and radiation characteristics of materials for
microwave and RF applications.
He earned a PhD in electrical engineering at Syracuse University, Syracuse, New
York. He is a recipient of several research awards, including 2013 IPFW Outstanding
Researcher Award, 2012 IPFW Featured Faculty Award, 2011 Sigma Xi Researcher
of the Year Award; and 2010 IPFW College of Engineering, Technology, and
Computer Science Excellence in Research Award.
Dr. Eroglu is the author of five books and has published more than 100 peer-
reviewed journals and conference papers. He has several patents in RF component,
device design, and methodology. He also serves as a reviewer and editorial board
member for several journals.
xv
1 Radio Frequency
Amplifier Basics
1.1 INTRODUCTION
Radio frequency (RF) power amplifiers are one of the critical elements for commu-
nication systems when signal in use needs to be amplified for several applications.
The simplified RF power amplifier block diagram is shown in Figure 1.1.
Radio frequency power amplifiers consist of several surrounding components.
The main component of the amplifier is the active device that is critical in the ampli-
fication process. The surrounding components in the amplifier are matching net-
works that are implemented at the input and output of the amplifier, biasing network,
stability networks, filters that are used to eliminate spurious or harmonic contents,
and control system of the amplifier to ensure the functionality of the amplifier against
various conditions.
The type and class of the amplifier are important parameters in the design pro-
cess, apart from the design of its surrounding components. The amplifier type can be
small signal or large signal based on the design, whereas class of the amplifier might
belong to a group of linear or switch-mode class of amplifiers. The type and class of
the amplifier are based on the application and requirements identified beforehand for
the designer. In this book, different components, types, and classes of the amplifiers;
mathematical and computer tools that are used to design, simulate, and implement
RF; and microwave amplifier and components will be discussed.
1
2 Linear and Switch-Mode RF Power Amplifiers
Vdc
Rchoke
Zg
Input Output
Vg matching matching ZL
network network
the maximum power to the load connected at the output of the amplifier. Hence, the
technique called load line matching [1] needs to be implemented to overcome the
limitations due to physical rating of active device and have the maximum voltage and
current swing. The optimum load impedance that will give the practical maximum
power can be obtained from the maximum swing points for voltage and current from
Vmax_ swing
Ropt = . (1.1)
I max_ swing
The difference between conjugate matching used in small signal amplifier design
and load matching used in large signal amplifier design can be better understood
using the simplified circuit given in Figure 1.2.
The maximum power transfer in the circuit shown in Figure 1.2 occurs when
If we assume that there are no device or component limitations in the circuit, then
this will hold true, and the maximum power will be transferred as indicated for small
IL
Ig Rg Bg RL BL VL
FIGURE 1.2 Simplified circuit for large signal and small signal analysis.
Radio Frequency Amplifier Basics 3
signal analysis. However, if there is limitation for voltage or current, this cannot be
applied. For instance, for the circuit in Figure 1.2, let us assume Rg = 50 [Ω] and the
maximum operating voltage and current are Vmax = 20 [V ], I max = 2 [ A].
Then, the maximum power transfer using conjugate method dictates that
RL = RL = 50 [Ω].
Since, RL and Rg are in parallel, the equivalent impedance is Req = 25 [Ω]. The output
voltage is then calculated to be
which is more than the amount of maximum voltage that can be handled in the cir-
cuit. Hence, the maximum current that can be obtained with this configuration by
staying within the given operating limit of the voltage is I L,max = 0.8 [A]. Then, the
maximum power without exceeding the operating limit is
Now, let us assume, we would like to use the load line matching method, which is the
viable design method for large signal amplifiers. Then, the optimum load resistance
is calculated to be
Vmax 20
RL = = = 10 [ Ω ] .
I max 2
This is the method that can now utilize the ratings of devices and gives maximum
power attainable in practice.
Large signal amplifiers can be classified as Class A, Class B, and Class AB for
linear mode of operation and Class C, Class D, Class E, and Class F for nonlinear
mode of operation. Classes D, E, and F are also known as switch-mode amplifiers.
1.3 LINEAR AMPLIFIERS
Consider the amplifier voltage transfer characteristics illustrated in Figure 1.3. The
output of the amplifier is linearly proportional to the input of the amplifier via volt-
age gain β. The output voltage will be identical to the input voltage. The relationship
between input and output of the amplifier can be expressed mathematically as
vo (t ) = βvi (t ). (1.3)
4 Linear and Switch-Mode RF Power Amplifiers
Vin Vin
t t
PA
Vout
Slope = β
Vin
Vdc
RFchoke IDC
Io
+ Cd
Vo
ID VCd
+ IL
Vds
C L
RL
ZtLn
TABLE 1.1
Conduction Angles, Bias, and Quiescent Points for
Linear Amplifiers
Class Bias Point Quiescent Point Conduction Angle
A 0.5 0.5 2π
AB 0–0.5 0–0.5 π–2π
B 0 0 π
C <0 0 0–π
ID
Imax
Class A
Class AB
Class B VDS
Vsat Vmax
Class C
FIGURE 1.5 Load lines and bias points for linear amplifiers.
conditions or “Q points” or the dc bias conditions for the transistor, which represent
the operational device voltages and drain current as shown in Figure 1.5.
Classes A, AB, and B amplifiers have been used for linear applications where ampli-
tude modulation (AM), single-sideband modulation (SSB), and quadrate amplitude
modulation (QAM) might be required. The summary of the operational characteristics
of linear amplifiers and Class C nonlinear amplifiers is given in Tables 1.2 and 1.3.
1.4 SWITCH-MODE AMPLIFIERS
When the transistor is used as switch, then the amplifier operates in nonlinear mode
of operation, and it can be illustrated with the equivalent circuit in Figure 1.6. Classes
C, D, E, and F are usually implemented for narrowband-tuned amplifiers when high
efficiency is desired with high power. Classes A, B, AB, and C are operated as trans-
conductance amplifiers, and the mode of operation depends on the conduction angle.
6 Linear and Switch-Mode RF Power Amplifiers
TABLE 1.2
Summary of Linear Amplifier Operational Characteristics
Amplifier Transistor (Q)
Class Mode Operation Pros Cons
A Linear Always conducting Most linear, lowest Poor efficiency
distortion
B Linear Each device is on ηB > ηA Worse linearity than
half cycle Class A
AB Linear Mid conduction Improved linearity with Power dissipation for
respect to Class B low signal levels
higher than Class B
C Nonlinear Each device is on High Po Inherent harmonics
half cycle
TABLE 1.3
Summary of Linear Amplifier Performance Parameters
Normalized RF Power
Max Output Power Normalized Normalized Capability
Amplifier Efficiency Po,max Vm Im Po,max
Vds,max I d,max
Class ηmax [%] Vdc2 /2RL Vdc I dc VmI m
A 50 1 2 2 0.125
B 78.5 1 2 π = 3.14 0.125
C 86 (θ = 71°) 1 2 3.9 0.11
Vdc
RFchoke IDC
Io
Cd
+
Vo
ID VCd
IL
+
Vds
C L RL
ZtLn
TABLE 1.4
Summary of Switch-Mode Amplifier Operational Characteristics
Normalized RF Power
Max Output Power Normalized Normalized Capability
Amplifier Efficiency Po,max Vds,max Vm I d,max
Im Po,max
Class ηmax [%] Vdc2 /2RL Vdc I dc VmI m
D 100 16/π = 1.624
2 2 π/2 = 1.57 1/π = 0.318
E 100 4/(1 + π2/4) = 1.154 3.6 2.86 0.098
F 100 16/π2 = 1.624 2 π = 3.14 1/2π = 0.318
TABLE 1.5
Summary of Switch-Mode Amplifier Performance Parameters
Amplifier Transistor (Q)
Class Mode Operation Pros Cons
D Switch mode Q1 and Q2 switched Max efficiency and Device parasitics
on/off alternately best power are issue at high
frequencies
E Switch-mode Transistor is switched Max efficiency, no High-voltage stress
on/off loss due to parasitics on transistor
F Switch mode Transistor is switched Max efficiency and Power loss due to
on/off no harmonic power discharge of output
delivered capacitance
S Switch mode Q1 and Q2 are switched Wider dynamic range Upper frequency
on/off with modulated and high efficiency range is limited
signal
1.5 POWER TRANSISTORS
The selection of a transistor that will be used for amplification in RF amplifier is very
critical, because it can affect the performance of the amplifier parameters including
efficiency, dissipation, power delivery, stability, linearity, etc. Once the transistor is
8 Linear and Switch-Mode RF Power Amplifiers
TABLE 1.6
Typical Parameter Values for Semiconductor Materials
Thermal
RF High-Power Conductivity Ebr JM =
Material μ [cm2/Vs] εr Eg [eV] [W/cmK] [MV/cm] Ebrvsat/2π Tmax [°C]
Si 1350 11.8 1.1 1.3 0.3 1.0 300
GaAs 8500 13.1 1.42 0.46 0.4 2.7 300
SiC 700 9.7 3.26 4.9 3.0 20 600
GaN 1200 (Bulk) 9.0 3.39 1.7 3.3 27.5 700
2000 (2DEG)
selected for the corresponding amplifier topology, size of the transistor, die place-
ment, bond pads, bonding of the wires, and lead connections will determine the lay-
out of the amplifier and the thermal management of the system. The most commonly
used RF and microwave power devices for commercial purposes are based on silicon
(Si), gallium arsenide (GaAs), and its compounds. There is an intense research in the
development of high-power density devices using materials that have a wide bandgap
such as silicon carbide (SiC) and gallium nitride (GaN). Fundamentally, the device
performance is determined by several parameters including material energy band-
gap, breakdown field, electrons and holes transport properties, thermal conductivity,
saturated electron velocity, and conductivity. The typical values of these parameters
for various types of semiconductor materials are given in Table 1.6.
The power device family tree can be simplified and is shown in Figure 1.7.
1.5.2 FETs
The FET family includes a variety of structures, among which are metal-semiconductor
field-effect transistors (MESFETs), MOSFETs, HEMTS, etc. They typically consist
Radio Frequency Amplifier Basics 9
Power devices
BJT FET
HBT
MOSFET MESFET JFET
GaAs MESFET
GaAs MOSFET
Si MOSFET
Heterostructure MESFET
InP MESFET
Si MESFET
Si JFET
GaAs JFET
NMOS, PMOS
CMOS
HMOS
DMOS, DIMOS
VMOS
SOS, SOI
Di used
Grown
Single channel
V-groove
Multi channel
Hetrojunction
Single gate
Interdigital structure
Dual gate
(a) (b)
FIGURE 1.8 Typical layer structure of (a) silicon BJT and (b) InP/InGaAs HBT transistor.
of a conductive channel accessed by two ohmic contacts, acting as source (S) and
drain (D) terminals, respectively. The third terminal, the gate (G), forms a rectify-
ing junction with the channel or a metal oxide semiconductor (MOS) structure. A
simplified structure of a metal–semiconductor n-type FET is depicted in Figure 1.9
[5]. FET devices ideally do not draw current through the gate terminal, unlike the
BJTs, which conversely require a significant base current, thus simplifying the bias-
ing arrangement. FET devices exhibit a negative temperature coefficient, resulting
10 Linear and Switch-Mode RF Power Amplifiers
Depletion
region
Gate
Source Drain
n+ n+
n-channel
Semi-insulating substrate
TABLE 1.7
RF Power Transistors and Their Applications and Frequency of Operations
RF Transistor Drain BV [V] Frequency [GHz] Major Applications
RF power FET 65 0.001–0.4 VHF power amplifier
GaAs MesFET 16–22, 60 1–30 Radar, satellite, defense
SiC MesFET 100 0.5–2.3 Base station
GaN MesFET 160 1–30 Replacement for GaAs
Si LDMOS (FET) 65 0.5–2 Base station
Si VDMOS (FET) 65–1200 0.001–0.5 High power amplifiers, FM broadcasting,
and magnetic resonance imaging
BV, breakdown voltage; RF, radio frequency; HF, high frequency; LDMOS, laterally diffused MOSFET;
MESFET, metal-semiconductor field-effect transistor; VHF, very high frequency.
1.5.2.1 MOSFETs
MOSFETs are widely used in RF power amplifier applications, and their param-
eters are identified by manufacturers at different static and dynamic conditions.
Therefore, each MOSFET device has been manufactured with different char-
acteristics. The designer selects the appropriate device for the specific circuit
under consideration. One of the standard ways commonly used by designers for
selection of right MOSFET device is called figure of merit (FOM) [1]. There are
different types of FOMs that are used. FOM in its simplest form compares the
Radio Frequency Amplifier Basics 11
gate charge, Qg, against RdsON. The multiplication of gate charge and drain to
source on resistance relates to a certain device technology as it can be related to
the required Qg and RdsON to achieve the right scale for MOSFET. The challenge
is the relation between Qg and RdsON because MOSFET has inherent trade-offs
between ON resistance and gate charge i.e., the lower the 12 dsON, the higher
the gate charge will be. In device design, this is trade-off between conduction
loss versus switching loss. The new generation MOSFETs are manufactured to
have an improved FOM [2,6–8]. The comparison of FOM on MOSFETs manufac-
tured with different processes can be illustrated on planar MOSFET structure and
trench MOSFET structure. MOSFET with trench structure has seven times better
FOM versus planar structure as shown in Figure 1.10.
Two variations of the trench power MOSFET are shown Figure 1.11. The trench
technology has the advantage of higher cell density but is more difficult to manufac-
ture than the planar device.
Source Source
Polysilicon Source
Source gate metalization Gate
Gate oxide Oxide Gate
oxide
n+ n+
p+ Body p p
region p+
Channels n– Epi layer Channel
Higher density cell
Drift region n– Epi layer
n+ Substrate n+ Substrate
Drain
metalization Drain Drain
(a) (b)
Source Source Source Source
Gate
Gate
Oxide Gate
oxide
Electron flow
n+ Substrate
Drain Drain
FIGURE 1.11 Trench MOSFET. (a) Current crowding in V-Groove trench MOSFET and
(b) truncated V-Groove.
12 Linear and Switch-Mode RF Power Amplifiers
1.6 PASSIVE DEVICES
Passive components used in the design of amplifiers are inductors, capacitors, and
resistors. Their size, ratings, and packages vary depending on the operational param-
eters of the amplifier. Most of the time, capacitors and resistors need to be purchased
as off-the-shelf part, whereas inductors can be designed by the amplifier designer.
1.6.1 Inductor
Inductors can be implemented as discrete component or distributed element depend-
ing on the frequency of application. If a current flows through a wire wound, a
flux is produced through each turn as a result of magnetic flux density as shown in
Figure 1.12. The relation between the flux density and flux through each turn can be
represented as
Ψ=
∫ B ⋅ds. (1.4)
∫
λ = NΨ = N B ⋅ d s. (1.5)
Inductance is defined as the ratio of flux linkage to current flowing through the
windings as defined by
λ NΨ
L= = . (1.6)
I I
The inductance defined by Equation 1.6 is also known as self-inductance of the core
that is formed by the windings. The core can be an air core or a magnetic core.
Inductors can be formed as air-core inductors or magnetic-core inductors
depending on the application. When air-core inductors are formed through wind-
ings and operated at high frequency (HF), the inductor presents high-frequency
Ι Ι
+ –
a.d. 867.
In the year from the incarnation of our Lord Jesus Christ 867, in the
name of the Lord wishing to visit the holy places at Jerusalem, I,
Bernard, having taken for my companions two brother monks, one
of whom was of the monastery of St. Vincent at Beneventum, and
named Theudemund, and the other a Spaniard, named Stephen, we
went to Rome, to Pope Nicholas, and obtained the desired licence to
go, along with his benediction and assistance.
Thence we went to Mount Gargano, in which is the Church of St.
Michael, under one stone, covered above with oak trees; which
church is said to have been dedicated by the archangel himself. Its
entrance is from the north, and it is capable of containing sixty men.
In the interior, on the east side, is the image of the angel; to the
south is an altar on which sacrifice is offered, and no other gift is
placed there. But there is suspended before the altar a vessel in
which gifts are deposited, which also has near it other altars.
Benignatus is abbot of this place, and presides over a numerous
brotherhood.
Leaving Mount Gargano, we travelled a hundred and fifty miles, to a
city in the power of the Saracens, named Bari[44], which was
formerly subject to Beneventum. It is seated on the sea, and is
fortified to the south by two very wide walls; but to the north it
stands exposed to the sea. Here we obtained from the prince of the
city, called the sultan, the necessary arrangements for our voyage,
with two letters of safe conduct, describing our persons and the
object of our journey, to the prince of Alexandria, and to the prince
of Babylonia[45]. These princes are under the jurisdiction of the
Emir-al-Mumenin, who rules over all the Saracens, and resides in
Bagada and Axinarri, which are beyond Jerusalem.
From Bari we proceeded to the port of the city of Tarentum, a
distance of ninety miles, where we found six ships, having on board
nine thousand captives of the Christians of Beneventum. In the two
ships which sailed first, and which were bound for Africa, were three
thousand captives; and in the two which followed them, and which
went to Tunis, there were also three thousand. The two others,
which likewise contained the same number of Christian captives,
carried us to the port of Alexandria, after a voyage of thirty days.
Here we were prohibited from landing by the captain of the sailors,
who had sixty under his command, until we had given six aurei for
our leave. Thence we went to the prince of Alexandria, and showed
him the letter which the sultan had given us, to which, however, he
paid no attention, but obliged each of us to pay thirteen deniers, and
then gave us letters to the prince of Babylonia. It is the custom of
these people to take in weight only what can be weighed; and six of
our sols and six deniers make three sols and three deniers of their
money.
The city of Alexandria is adjacent to the sea. It was here that St.
Mark, preaching the gospel, bore the episcopal dignity; and outside
the eastern gate of the city is the monastery of the saint, with the
church in which he formerly reposed. But the Venetians coming
there obtained his body by stealth, and carrying it on shipboard,
sailed home with it. Without the western gate is a monastery called
The Forty Saints, in which, as well as in the former, there are a
number of monks. The port is to the north of the city; on the south
is the entrance to the Gyon, or Nile, which waters Egypt, and,
running through the middle of the city, empties itself into the sea in
the aforesaid port. We entered the river, and sailed to the south six
days, and came to the city of Babylon of Egypt, where once reigned
king Pharaoh, under whom Joseph built the seven granaries still
remaining. When we went on shore at Babylon, the guards of the
city carried us before the prince, a Saracen named Adalhacham, who
inquired of us the object of our journey, and asked us from what
princes we had letters. Whereupon we showed him the letters of the
aforesaid sultan, and those of the prince of Alexandria; but they
were of no service to us, for he sent us to prison, where we
remained six days, and then, having consulted together, we obtained
our liberty by giving more money. He then gave us letters, which
effectually protected us from any further exactions, for he was
second in command to the Emir-al-Mumenin aforesaid. Nevertheless,
when we entered the cities mentioned in the following narrative, we
were never allowed to leave them until we had received a paper or
impression of a seal, for which we had to pay one or two deniers.
There is in this city a patriarch, by name Michael[46], who by the
grace of God rules over the bishops, monks, and other Christians
throughout Egypt. These Christians are tolerated by the pagans, on
condition of paying for each person an annual tribute to the
aforesaid prince, and they live in security and freedom. This tribute
is three, or two, or one aureus, or for a meaner person thirteen
deniers. But he who cannot pay thirteen deniers, whether he be a
native or a stranger, is thrown into prison, until God or some good
Christian redeem him.
We now returned by the river Gyon, and came to the city of Sitinulh,
and thence proceeded to Malla; and from Malla we sailed across to
Damietta, which has the sea to the north, and on all other sides the
river Nile, with the exception of a small strip of land. We sailed
thence to the city of Tamnis, in which the Christians are very pious,
and exceedingly hospitable. This city possesses no land, except
where the churches stand; and there is shown the field of Thanis,
where lie, in the manner of three walls, the bodies of those who died
in the time of Moses[47]. From Tamnis we came to the city of
Faramea, where is a church of St. Mary, on the spot to which, by the
admonition of the angel, Joseph fled with the child and its mother. In
this city there is a multitude of camels, which are hired from the
natives by travellers to carry their baggage across the desert, which
is a journey of six days. At this city the desert begins; and it may
well be called a desert, for it bears neither grass nor fruit of any
kind, with the exception of palm-trees, and it is white, like a plain
covered with snow. In the middle of the route there are two
caravanserais, one called Albara, the other Albacara, in which the
Christians and pagans traffic for the things necessary on the journey.
But around them the earth is as barren as in the rest of the desert.
After Albacara the earth becomes fruitful, and continues so to the
city of Gaza, which was the city of Samson, and is very rich in all
things. Then we came to Alariza, and thence we went to Ramula,
near which is the monastery of St. George the Martyr, in which he
rests. From Ramula we hastened to the castle of Emaus; and thence
we went to the holy city of Jerusalem, where we were received in
the hostel founded there by the glorious emperor Charles[48], in
which are received all the pilgrims who speak the Roman tongue; to
which adjoins a church in honour of St. Mary, with a most noble
library, founded by the same emperor, with twelve mansions, fields,
vineyards, and a garden in the Valley of Jehoshaphat. In front of the
hospital is a market, for which every one trading there pays yearly to
him who provides it two aurei.
Within this city, besides others, there are four principal churches,
connected with each other by walls; one to the east, which contains
the Mount of Calvary, and the place in which the cross of our Lord
was found, and is called the Basilica of Constantine; another to the
south; a third to the west, in the middle of which is the sepulchre of
our Lord, having nine columns in its circuit, between which are walls
made of the most excellent stones; of which nine columns, four are
in front of the monument itself; which, with their walls, include the
stone placed before the sepulchre, which the angel rolled away, and
on which he sat after our Lord's resurrection. It is not necessary to
say more of this sepulchre, since Bede has given a full description of
it in his history[49]. I must not, however, omit to state, that on Holy
Saturday, which is the eve of Easter, the office is begun in the
morning in this church, and after it is ended the Kyrie Eleison is
chanted, until an angel comes and lights the lamps which hang over
the aforesaid sepulchre[50]; of which light the patriarch gives their
shares to the bishops and to the rest of the people, that each may
illuminate his own house. The present patriarch is called
Theodosius[51], and was brought to this place on account of his
piety from his monastery, which is fifteen miles from Jerusalem, and
was made patriarch over all the Christians in the Land of Promise.
Between the aforesaid four churches is a parvis without roof, the
walls of which shine with gold, and the pavement is laid with very
precious stone; and in the middle four chains, coming from each of
the four churches, join in a point which is said to be the middle of
the world.
There is, moreover, in the city, another church on Mount Sion, which
is called the Church of St. Simeon, where our Lord washed the feet
of his disciples, and in which is suspended our Lord's crown of
thorns. St. Mary is said to have died in this church. Near it, towards
the east, is a church in honour of St. Stephen, on the spot where he
is believed to have been stoned. And, indirectly to the east, is a
church in honour of St. Peter, in the place where he denied our Lord.
To the north is the Temple of Solomon, having a synagogue of the
Saracens[52]. To the south of it are the iron gates through which the
angel of the Lord led Peter out of prison, and which were never
opened afterwards.
Leaving Jerusalem, we descended into the Valley of Jehoshaphat,
which is a mile from the city, containing the village of Gethsemane,
with the place of the nativity of St. Mary. In it is a round church of
St. Mary, containing her sepulchre, on which the rain never falls,
although there is no roof above it. There is also a church on the spot
where our Lord was betrayed, containing the four round tables of his
Supper. In the Valley of Jehoshaphat there is also a church of St.
Leon, in which it is said that our Lord will come at the Last
Judgment. Thence we went to Mount Olivet, on the declivity of
which is shown the place of our Lord's prayer to the Father. On the
side of the same mountain is shown the place where the Pharisees
brought to our Lord the woman taken in adultery, where there is a
church in honour of St. John, in which is preserved the writing in
marble which our Lord wrote on the ground[53]. At the summit of
the mountain, a mile from the Valley of Jehoshaphat, is the place of
our Lord's ascension, in the middle of which, on the spot from which
he ascended, is an altar open to the sky, on which mass is
celebrated. Thence we proceeded to Bethany, which is to the south,
on the ascent of the mountain, one mile from the top; there is here
a monastery, with a church containing the sepulchre of Lazarus;
near which, to the north, is a pool in which, by our Lord's command,
Lazarus washed himself after he had been raised from the dead; and
he is said to have been subsequently bishop in Ephesus forty years.
On the western declivity of Mount Olivet is shown the marble from
which the Lord descended on the foal of an ass. Between these, to
the south, in the Valley of Jehoshaphat, is the pool of Siloah.
When we left Jerusalem on the way to Bethlehem, the place of our
Lord's nativity, distant six miles, we were shown the field in which
Habakkuk was at work when the angel of the Lord ordered him to
carry his meal to Daniel in Babylon, which is to the south, where
Nebuchadnezzar reigned, but which is now the haunt of serpents
and wild beasts. At Bethlehem there is a very large church in honour
of St. Mary, in the middle of which is a crypt under a stone, the
entrance of which is from the south, and the egress from the east, in
which is shown the manger of our Lord, on the west side of the
crypt. But the place in which our Lord cried, is to the east, having an
altar where masses are celebrated. Near this church, to the south, is
a church of the Blessed Innocents, the martyrs. One mile from
Bethlehem, is the monastery of the Holy Shepherds, to whom the
angel appeared at our Lord's nativity. Lastly, thirty miles to the east
of Jerusalem is the river Jordan, on which is the monastery of St.
John; in which space there are also many other monasteries. Among
them, one mile to the south of the city of Jerusalem, is the church of
St. Mamilla, in which are many bodies of martyrs slain by the
Saracens, and diligently buried there by her.
We returned from the holy city of Jerusalem direct to the sea, where
we took ship, and sailed sixty days in very great peril, from the
violence of the wind. At length we landed at Mons Aureus, where is
a crypt containing seven altars, and having above it a great forest;
which crypt is so dark, that none can enter it without lamps. The
abbot there is Dom Valentine. Thence we went to Rome, within
which city, to the east, in a place called Lateran, is a well-built
church in honour of St. John the Baptist, where is the special see of
the popes; and there, every year, the keys are carried to the pope
from every part of the city. On the west side of Rome is the church
of St. Peter, the chief of the Apostles, where he rests; the magnitude
of which is unequalled by any church in the whole world, and it
contains a variety of ornaments. In which city repose innumerable
bodies of saints.
Here I separated from my companions; I myself proceeded thence
to St. Michael ad Duas Tumbas[54], which is a place situated on a
mountain that runs out two leagues into the sea. At the summit of
this mountain is a church in honour of St. Michael; the mountain is
surrounded by the tide twice every day, at morning and evening,
and men cannot go to the mountain until the sea retires. But on the
Feast of St. Michael the sea does not join round the mountain when
the tide comes in, but stands like walls to the right and left, so that
on that day all who wish to perform their devotions there can pass
to the mountain any hour of the day, which they cannot do on other
days. There Phinimontius, a Breton, is abbot.
Now I will tell you how the Christians keep God's law both at
Jerusalem and in Egypt. The Christians and Pagans have there such
a peace between them, that if I should go a journey, and in the
journey my camel or ass which carries my baggage should die, and I
should leave everything there without a guard, and go to the next
town to get another, on my return I should find all my property
untouched. The law of public safety is there such, that if they find in
a city, or on the sea, or on the road, any man journeying by night or
by day, without a letter, or some mark of a king or prince of that
land, he is immediately thrown into prison, till the time he can give a
good account whether he be a spy or not.
The people of Beneventum, in their pride, slew their prince, Sichard,
and did great injury to the Christian faith; then they had quarrels
and contentions among themselves, until Louis, the brother of
Lothaire and Charles[55], obtained the empire over them. And in
Romania many crimes are committed, and there are bad people
there, banditti and thieves, and so men cannot go to Rome to visit
St. Peter, unless they join together in troops, and go armed. In
Lombardy, under the reign of the aforesaid Louis, there is tolerably
good peace. The Bretons also have peace among themselves; and it
is there the custom that if any one injure another, a third
immediately comes, whoever he may be who witnesses it, and takes
up the cause of the injured man as though he were his neighbour.
And if any one is proved to have stolen more than four deniers, they
slay him, or hang him on a gallows[56].
I will add, in conclusion, that we saw in the village of Gethsemane
squared marble stones of that fineness that a man might see any
thing he liked in them, as in a looking-glass.
THE TRAVELS OF SÆWULF.
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